不同摻Al3+濃度的ZnO:Al薄膜性能研究

采用溶膠-凝膠法制備ZnAl(ZAO)薄膜，得到了不同摻Al3＋濃度的ZAO薄膜；利用X射線衍射儀分析、原子力顯微鏡、紫外-可見分光光度計及四探針法等儀器與方法對其性能進(jìn)行了測試。通過分析比較，得出所制備的ZAO薄膜為多晶纖鋅礦結(jié)構(gòu)，薄膜表面平整、晶粒致密均勻；Al3＋摻雜能提高其導(dǎo)電性能：低摻雜時，薄膜在紫外-可見光范圍的透過率超過80％，并伴有藍(lán)移現(xiàn)象產(chǎn)生；高摻雜時，其透過率無明顯增加，但藍(lán)移現(xiàn)象加劇，最大藍(lán)移量達(dá)340 nm 。
ZnAl (ZAO) thin films with different proportion of Al3+ doping are prepared by sol-gel method. XRD, AFM, ultraviolet-visible spectroscope meter and the method of four-explorwtion-needle are adopted to test the property of ZAO thin films. Through analysis and comparison, hereinafter phenomena can be obtained: ZAO thin films prepared by sol-gel method has polycrystalline hexagonal wurtzite structure , the surface of the ZAO thin films is flat, the crystal is very thickness and symmetry. The conductivity can be improved by Al3+ doping. The transmittance in ultraviolet-visible region is higher than 80％ with hypo-Al3+ doping, accompanying the phenomena of Burstein moving. The transmittance increases indistinctively, but the phenomena of burstein moving is aggravating, the most amount of Burstein moving measure up to 340 nm.