服務(wù)介紹
隨著技術(shù)發(fā)展,第三代半導(dǎo)體功率器件開(kāi)始由實(shí)驗(yàn)室階段步入商業(yè)應(yīng)用,未來(lái)應(yīng)用潛力巨大,這些新型器件測(cè)試要求更高的電壓和功率水平,更快的開(kāi)關(guān)時(shí)間。
測(cè)試周期:
根據(jù)標(biāo)準(zhǔn)、試驗(yàn)條件及被測(cè)樣品量確定
產(chǎn)品范圍:
MOSFET、IGBT、DIODE、BJT,第三代半導(dǎo)體器件等分立器件,以及上述元件構(gòu)成的功率模塊
測(cè)試項(xiàng)目:
靜態(tài)參數(shù) | 符號(hào) |
Drain to Source Breakdown Voltage | BVDSS |
Drain Leakage Current | IDSS |
Gate Leakage Current | IGSS |
Gate Threshold Voltage | VGS(th) |
Drain to Source On Resistance | RDS(on) |
Drain to Source On Voltage | VDS(on) |
Body Diode Forward Voltage | VSD |
Internal Gate Resistance | Rg |
Input capacitance | Cies |
Output capacitance | Coes |
Reverse transfer capacitance | Cres |
Transconductance | gfs |
Gate to Source Plateau Voltage | Vgs(pl) |
動(dòng)態(tài)參數(shù) | 符號(hào) |
Turn-on delay time | td(on) |
Rise time | tr |
Turn-off delay time | td(off) |
Fall time | tf |
Turn-on energy | Eon |
Turn-off energy | Eoff |
Diode reverse recovery time | trr |
Diode reverse recovery charge | Qrr |
Diode peak reverse recovery current | Irrm |
Diode peak rate of fall of reverse recovery current | dirr/dt |
Total gate charge | QG |
Gate-Emitter charge | QGC |
Gate-Collector charge | QGE |
其他參數(shù) | 符號(hào) |
thermal resistance | Rth |
Unclamped Inductive Switching | UIS |
Reverse biased safe operating area | RBSOA |
Short circuit safe operation area | SCSOA |