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DDR內(nèi)存條引腳定義圖 管腳定義圖

2007年12月15日 21:55 本站原創(chuàng) 作者：本站 用戶評(píng)論（0）
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DDR內(nèi)存條引腳定義圖 管腳定義圖

DDR2 SDRAM DIMM 240 pin

DDR: Double Data Rate
DIMM: Dual Inline Memory Module
SDRAM: Synchronous Dynamic Random Access Memory, Synchronous to Positive Clock Edge.
PIN CONFIGURATIONS (Front side / back side)

Front Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1 VREF 31 DQ19 61 A4 91 VSS 121 VSS 151 VSS 181 VDDQ 211 DM5/DQS14
2 VSS 32 VSS 62 VDDQ 92 DQS5# 122 DQ4 152 DQ28 182 A3 212 NC/DQS14#
3 DQ0 33 DQ24 63 A2 93 DQS5 123 DQ5 153 DQ29 183 A1 213 VSS
4 DQ1 34 DQ25 64 VDD 94 VSS 124 VSS 154 VSS 184 VDD 214 DQ46
5 VSS 35 VSS 65 VSS 95 DQ42 125 DM0/DQS9 155 DM3/DQS12 185 CK0 215 DQ47
6 DQS0# 36 DQS3# 66 VSS 96 DQ43 126 NC/DQS9# 156 NC/DQS12# 186 CK0# 216 VSS
7 DQS0 37 DQS3 67 VDD 97 VSS 127 VSS 157 VSS 187 VDD 217 DQ52
8 VSS 38 VSS 68 PAR_IN 98 DQ48 128 DQ6 158 DQ30 188 A0 218 DQ53
9 DQ2 39 DQ26 69 VDD 99 DQ49 129 DQ7 159 DQ31 189 VDD 219 VSS
10 DQ3 40 DQ27 70 A10/AP 100 VSS 130 VSS 160 VSS 190 BA1 220 RFU
11 VSS 41 VSS 71 BA0 101 SA2 131 DQ12 161 CB4 191 VDDQ 221 RFU
12 DQ8 42 CB0 72 VDDQ 102 NC 132 DQ13 162 CB5 192 RAS# 222 VSS
13 DQ9 43 CB1 73 WE# 103 VSS 133 VSS 163 VSS 193 S0# 223 DM6/DQS15
14 VSS 44 VSS 74 CAS# 104 DQS6# 134 DM1/DQS10 164 DM8/DQS17 194 VDDQ 224 NC/DQS15#
15 DQS1# 45 DQS8# 75 VDDQ 105 DQS6 135 NC/DQS10# 165 NC/DQS17# 195 ODT0 225 VSS
16 DQS1 46 DQS8 76 S1# 106 VSS 136 VSS 166 VSS 196 NC/A13 226 DQ54
17 VSS 47 VSS 77 0DT1 107 DQ50 137 RFU 167 CB6 197 VDD 227 DQ55
18 RESET# 48 CB2 78 VDDQ 108 DQ51 138 RFU 168 CB7 198 VSS 228 VSS
19 NC 49 CB3 79 VSS 109 VSS 139 VSS 169 VSS 199 DQ36 229 DQ60
20 VSS 50 VSS 80 DQ32 110 DQ56 140 DQ14 170 VDDQ 200 DQ37 230 DQ61
21 DQ10 51 VDDQ 81 DQ33 111 DQ57 141 DQ15 171 CKE1 201 VSS 231 VSS
22 DQ11 52 CKE0 82 VSS 112 VSS 142 VSS 172 VDD 202 DM4/DQS13 232 DM7/DQS16
23 VSS 53 VDD 83 DQS4# 113 DQS7# 143 DQ20 173 NC 203 NC/DQS13# 233 NC/DQS16#
24 DQ16 54 NC/BA2 84 DQS4 114 DQS7 144 DQ21 174 NC 204 VSS 234 VSS
25 DQ17 55 ERR_OUT 85 VSS 115 VSS 145 VSS 175 VDDQ 205 DQ38 235 DQ62
26 VSS 56 VDDQ 86 DQ34 116 DQ58 146 DM2/DQS11 176 A12 206 DQ39 236 DQ63
27 DQS2# 57 A11 87 DQ35 117 DQ59 147 NC/DQS11# 177 A9 207 VSS 237 VSS
28 DQS2 58 A7 88 VSS 118 VSS 148 VSS 178 VDD 208 DQ44 238 VDDSPD
29 VSS 59 VDD 89 DQ40 119 SDA 149 DQ22 179 A8 209 DQ45 239 SA0
30 DQ18 60 A5 90 DQ41 120 SCL 150 DQ23 180 A6 210 VSS 240 SA1

Note: Pin 196 is NC for 512MB, or A13 for 1GB and 2GB; pin 54 is NC for 512MB and 1GB, or BA2 for 2GB.

Pin Descriptions

Pin numbers may not correlate with symbols; refer to Pin Assignment table above for more information.

Pin Numbers Symbol Type Description
195 ODT0 Input On-Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When enabled, ODT is only applied to each of the following pins: DQ, DQS, DQS#, RDQS, RDQS#, CB, and DM. The ODT input will be ignored if disabled via the LOAD MODE command.
185, 186 CK0, CK0# Input Clock: CK and CK# are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK#. Output data (DQs and DQS/DQS#) is referenced to the crossings of CK and CK#.
52 CKE0 Input Clock Enable: CKE (registered HIGH) activates and CKE (registered LOW) deactivates clocking circuitry on the DDR2 SDRAM. The specific circuitry that is enabled/disabled is dependent on the DDR2 SDRAM configuration and operating mode. CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all device banks idle), or ACTIVE POWERDOWN (row ACTIVE in any device bank). CKE is synchronous for POWER-DOWN entry, POWER-DOWN exit, output disable, and for SELF REFRESH entry. CKE is asynchronous for SELF REFRESH exit. Input buffers (excluding CK, CK#, CKE, and ODT) are disabled during POWER-DOWN. Input buffers (excluding CKE) are disabled during SELF REFRESH. CKE is an SSTL_18 input but will detect a LVCMOS LOW level once VDD is applied during first power-up. After Vref has become stable during the power on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh operation VREF must be maintained to this input.
193 S0# Input Chip Select: S# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when S# is registered HIGH. S# provides for external rank selection on systems with multiple ranks. S# is considered part of the command code.
73, 74, 192 RAS#, CAS#, WE# Input Command Inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered.
54 (2GB), 71, 190 BA0, BA1, BA2 (2GB) Input Bank Address Inputs: BA0–BA1/BA2 define to which device bank an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA0–BA1 define which mode register including MR, EMR, EMR(2), and EMR(3) is loaded during the LOAD MODE command.
57, 58, 60, 61, 63, 70, 176, 177, 179, 180, 182, 183, 188, 196 (1GB, 2GB) A0–A12 (512MB) A0–A13 (1GB, 2GB) Input Address Inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for Read/ Write commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one device bank (A10 LOW, device bank selected by BA0–BA1/BA2) or all device banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command.
3, 4, 9, 10, 12, 13, 21, 22, 24, 25, 30, 31, 33, 34, 39, 40, 80, 81, 86, 87, 89, 90, 95, 96, 98, 99, 107, 108, 110, 111, 116, 117, 122, 123, 128, 129, 131, 132, 140, 141, 143, 144, 149, 150, 152, 153, 158, 159, 199, 200, 205, 206, 208, 209, 214, 215, 217, 218, 226, 227, 229, 230, 235, 236 DQ0–DQ63 I/O Data Input/Output: Bidirectional data bus.
6, 7, 15, 16, 27, 28, 36, 37, 45, 46, 83, 84, 92, 93, 104, 105, 113, 114, 126, 135, 147, 156, 165, 203, 212, 224, 233 125, 134, 146, 155, 164, 202, 211, 223, 232 DQS0–DQS8, DQS0#– DQS17#, DM0–DM8 (DQS9– DQS17) I/O Data Strobe: Output with read data, input with write data for source synchronous operation. Edge-aligned with read data, center aligned with write data. DQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input-only, the DM loading is designed to match that of DQ and DQS pins. If RDQS is disabled, DQS0–DQS17 become DM0–DM8 and DQS9#–DQS17# are not used.
42, 43, 48, 49, 161, 162, 167, 168 CB0–CB7 I/O Check Bits.
68 PAR_IN Input Parity bit for the address and control bus.
55 ERR_OUT Output Parity error found on the address and control bus.
120 SCL Input Serial Clock for Presence-Detect: SCL is used to synchronize the presence-detect data transfer to and from the module.
101, 239, 240 SA0–SA2 Input Presence-Detect Address Inputs: These pins are used to configure the presence-detect device.
119 SDA I/O Serial Presence-Detect Data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module.
18 RESET# Input Asynchronously forces all registered outputs LOW when RESET# is LOW. This signal can be used during power up to ensure that CKE is LOW and DQs are High-Z.
53, 59, 64, 67, 69, 172, 178, 184, 187, 189, 197, VDD Supply Power Supply: 1.8V ±0.1V.
51, 56, 62, 72, 75, 78, 170, 175, 181, 191, 194, VDDQ Supply DQ Power Supply: 1.8V ±0.1V.
1 VREF Supply SSTL_18 reference voltage.
2, 5, 8, 11, 14, 17, 20, 23, 26, 29, 32, 35, 38, 41, 44, 47, 50, 65, 66, 79, 82, 85, 88, 91, 94, 97,100, 103, 106, 109,112, 115, 118, 121, 124, 127, 130, 133, 136, 139, 142, 145, 148, 151, 154, 157, 160, 163, 166, 169, 198, 201, 204, 207, 210, 213, 216, 219, 222, 225, 228, 231, 234, 237 VSS Supply Ground.
238 VDDSPD Supply Serial EEPROM positive power supply: +1.7V to +3.6V.
19, 54 (512MB, 1GB), 76, 77, 102, 171, 196 (512MB), 173, 174, NC — No Connect: These pins should be left unconnected.
137, 138, 220, 221 RFU — Reserved for future use.

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