InGaAs/InP APD探測(cè)器光電特性檢測(cè)

建立了雪崩二極管的靜態(tài)光電特性的自動(dòng)測(cè)試系統(tǒng)。利用該系統(tǒng)對(duì)光敏面的直徑為500 μm的臺(tái)面型InGaAs/InP雪崩光電二極管(APDs)進(jìn)行測(cè)試。測(cè)試結(jié)果表明，該APD器件在90%擊穿電壓下的暗電流為151 nA，在直徑500 μm的光敏面上其光響應(yīng)均勻性良好。提出一種測(cè)量雪崩二極管倍增因子的方法，只需利用普通的測(cè)量電流-電壓的測(cè)試儀器，就可以獲得開始倍增時(shí)的光電流，從而得到APD的倍增因子。通過該方法得到的InGaAs/InP APD器件最大倍增因子的典型值在10～100量級(jí)。
關(guān) 鍵 詞 靜態(tài)光電特性的自動(dòng)測(cè)試系統(tǒng); 雪崩光電二極管; 大面積APD; 倍增因子

Abstract A measurement system is set up which could measure static optoelectronic characteristics of avalanche photodiodes (APDs). By using this system, the mesa-structure InP/InGaAs APDs is measured. The results show that the APDs have a relatively low dark current (～150 nA at 90% of breakdown) and a uniform photoresponse profile of about 500 μm diameter. A method of getting APDs’s multiplication gain is also proposed. Through getting the photocurrent at the point where multiplication is beginning, the multiplication gain can be obtained by the simple current-voltage equipment. For InP/InGaAs APDs, the typical maximum multiplication gain measured by this method is about 10～100.
Key words auto-measurement system of static optoelectronic characteristics; avalanche photodiodes; large area APD; multiplication gain