s29gl064n，s29gl032n 64兆位32兆位3v頁(yè)面模式鏡像點(diǎn)閃存

　　The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The S29GL064N is a 64-Mb device organized as 4，194，304 words or 8，388，608 bytes. The S29GL032N is a 32-Mb device organized as 2，097，152 words or 4，194，304 bytes. Depending on the model number， the devices have 16-bit wide data bus only， or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers. Access times as fast as 90 ns are available. Note that each access time has a specific operating voltage range （VCC） as specified in the Product Selector Guide and the Ordering Information–S29GL032N， and Ordering Information– S29GL064N. Package offerings include 48-pin TSOP， 56-pin TSOP， 48-ball fine-pitch BGA and 64-ball Fortified BGA， depending on model number. Each device has separate chip enable （CE#）， write enable （WE#） and output enable （OE#） controls. Each device requires only a single 3.0-Volt power supply for both read and write functions. In addition to a VCC input， a high-voltage accelerated program （ACC） feature provides shorter programming times through increased voltage on the WP#/ACC or ACC input. This feature is intended to facilitate factory throughput during system production， but may also be used in the field if desired. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.