18兆位QDR SRAM?II 四字突發(fā)結(jié)構(gòu)cy7c1315kv18-250bzxc

　　The CY7C1311KV18， CY7C1911KV18， CY7C1313KV18， and CY7C1315KV18 are 1.8 V Synchronous Pipelined SRAMs， equipped with QDR II architecture. QDR II architecture consists of two separate ports： the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II architecture has separate data inputs and data outputs to completely eliminate the need to ‘turnaround’ the data bus that exists with common I/O devices. Each port can be accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input （K） clock. Accesses to the QDR II read and write ports are independent of one another. To maximize data throughput， both read and write ports are equipped with DDR interfaces. Each address location is associated with four 8-bit words （CY7C1311KV18）， 9-bit words （CY7C1911KV18）， 18-bit words （CY7C1313KV18）， or 36-bit words （CY7C1315KV18） that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks （K and K and C and C）， memory bandwidth is maximized while simplifying system design by eliminating bus ‘turnarounds’。 Depth expansion is accomplished with port selects， which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C （or K or K in a single clock domain） input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. For a complete list of related documentation， click here.