三星NAND閃存規(guī)格書(shū) K9F4G08U0D

　　Offered in 512Mx8bit， the K9F4G08U0D is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides

　　the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250μs on the （2K+64）Byte page

　　and an erase operation can be performed in typical 2ms on a （128K+4K）Byte block. Data in the data register can be read out at 25ns cycle time per Byte.

　　The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase

　　functions including pulse repetition， where required， and internal verification and margining of data. Even the write-intensive systems can take advantage

　　of the K9F4G08U0D′s extended reliability of 100K program/erase cycles by providing ECC（Error Correcting Code） with real time mapping-out algorithm.

　　The K9F4G08U0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.